Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2005-05-31
2005-05-31
Chaudhari, Chandra (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S762000
Reexamination Certificate
active
06900071
ABSTRACT:
A substrate is provided with a substrate main body made from silicon, and an oxide film for a base formed thereon. The oxide film includes a first oxide film made mainly of a thermal SiO2film formed by thermally oxidizing silicon in the substrate main body, and a second oxide film made of a high-temperature oxide film deposited and formed thereon. Alternatively the second oxide film may be formed by TEOS.
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Wolf, “Silicon Processing for the VLSI Era”, 1986, pp. 182-188, 198-200.
Horikawa Makio
Ishibashi Kiyoshi
Okumura Mika
Chaudhari Chandra
Mitsubishi Denki & Kabushiki Kaisha
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