Substrate and manufacturing method therefor

Details Substrate and manufacturing method therefor Substrate and manufacturing method therefor

2005-10-04

2005-10-04

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C048S053300, C048S053300

Reexamination Certificate

active

06951796

ABSTRACT:
There is provided a method of manufacturing a substrate having a partial insulating layer under a semiconductor layer. A partial SOI substrate (40) is obtained by performing steps of forming the first substrate which has a separation layer, the first semiconductor layer (13) on the separation layer, a partial insulating layer (14a) on the first semiconductor layer (13), and second semiconductor layers (15b,16b) on the first semiconductor layer (13) exposed in the partial insulating layer (14a) and partial insulating layer (14a), bonding the second substrate (20) to the second semiconductor layers (15b,16b) on the first substrate to form a bonded substrate stack, and splitting the bonded substrate stack at the separation layer.

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