Substrate and isulation/masking structure for a semiconductor de

Details Substrate and isulation/masking structure for a semiconductor de Substrate and isulation/masking structure for a semiconductor de

1996-04-24

2000-04-25

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257378, 257372, 257374, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

060547413

ABSTRACT:
An oxidation layer 44 for masking is formed on a PNP type transistor formation region 46a together with a field oxidation layer 42 for device separation. The oxidation layer 44 for masking is formed so as to cover an upper part of an active base formation region 52a located between the emitter/collector formation region 50a. The upper part of the active base formation region 52a which is not possible to adjust impurity concentration at processes carried out later is covered with the oxidation layer 44 for masking being formed relatively thick when boron B is implanted into a PMOS type transistor formation region 48a as channel ion. So that, boron is not implanted ionically to the active base formation region 52a. Therefore, it is not necessary to carry out masking process using photo resist layer in prior to boron implantation process.

REFERENCES:
patent: 4939099 (1990-07-01), Seacrist et al.
patent: 4949154 (1990-08-01), Haken
patent: 5041895 (1991-08-01), Contiero et al.
patent: 5119162 (1992-06-01), Todd et al.
patent: 5286986 (1994-02-01), Kihara et al.
patent: 5286991 (1994-02-01), Hui et al.
patent: 5406512 (1995-04-01), Kagenishi
patent: 5481126 (1996-01-01), Subramanian et al.
patent: 5567963 (1996-10-01), Rao
patent: 5602576 (1997-02-01), Murooka et al.

Affiliated with

Also associated with

Rating

Substrate and isulation/masking structure for a semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substrate and isulation/masking structure for a semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate and isulation/masking structure for a semiconductor de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-995276