Substrate and a method for polishing a substrate

Details Substrate and a method for polishing a substrate Substrate and a method for polishing a substrate

2006-04-06

2009-06-30

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S693000, C451S106000

Reexamination Certificate

active

07553768

ABSTRACT:
A substrate having flatness of less than 230 nmPV and surface roughness at RMS of less than 0.20 nm. is obtained by a method comprising: a process of polishing an object to be polished with a polishing pad comprising at least one layer having compressibility of 5% or below in a base layer of the polishing pad.

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“Effects of Particle Concentration on Chemical Mechanical Planarization”, Electrochemical and Solid-State Letters, 5 (12) G109-G112 (2002), Cooper et al.

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