Substantially facet-free selective epitaxial growth process

Details Substantially facet-free selective epitaxial growth process Substantially facet-free selective epitaxial growth process

1992-08-26

1993-12-28

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 252 793, H01L 2100

Patent

active

052736210

ABSTRACT:
A process for growing selective epitaxial layers on a silicon substrate. In a epitaxial growth reactor, hydrogen and the reactive gasses, the silicon source gas and hydrochloric acid, are introduced. The amount of silicon to free hydrochloric acid is controlled to be about 1:6 during the growth process and then turned off, the hydrogen remaining on. The resulting epitaxial layer may be grown over one micron in thickness with less than 0.1 micron of faceting. Further, a etchant of H.sub.2 O and HF diluted in NHO.sub.3 is first used to remove surface damage on the silicon substrate prior to epitaxial layer growth.

REFERENCES:
patent: 4029542 (1977-06-01), Swartz
patent: 4071397 (1978-01-01), Estreicher et al.
patent: 4456501 (1984-06-01), Bayman et al.

Affiliated with

Also associated with

Rating

Substantially facet-free selective epitaxial growth process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substantially facet-free selective epitaxial growth process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substantially facet-free selective epitaxial growth process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1540347