Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2008-04-08
2008-04-08
Ngô, Ngân V. (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S942000, C257SE33006, C257SE33062
Reexamination Certificate
active
07354846
ABSTRACT:
A submount substrate for mounting a light emitting device and a method of fabricating the same, wherein since a submount substrate for mouthing a light emitting device in which a Zener diode device is integrated can be fabricated by means of a silicon bulk micromachining process without using a diffusion mask, some steps of processes related to the diffusion mask can be eliminated to reduce the manufacturing costs, and wherein since a light emitting device can be flip-chip bonded directly to a submount substrate for a light emitting device in which a Zener diode device is integrated, a process of packaging the light emitting device and the voltage regulator device can be simplified.
REFERENCES:
patent: 6492685 (2002-12-01), Koyama et al.
patent: 7229859 (2007-06-01), Yudasaka et al.
patent: 2004/0206970 (2004-10-01), Martin
patent: 2006/0091403 (2006-05-01), Chang et al.
patent: 2006/0175621 (2006-08-01), Ohtsuka et al.
Kim Geun ho
Park Chil Keun
KED & Associates LLP
LG Electronics Inc.
Ngo Ngan V.
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