Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-10-02
2007-10-02
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S100000, C257S778000, C257SE33057
Reexamination Certificate
active
11372204
ABSTRACT:
A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.
REFERENCES:
patent: 6720664 (2004-04-01), Teng et al.
patent: 6740906 (2004-05-01), Slater et al.
patent: 7196356 (2007-03-01), Ishii et al.
patent: 7215020 (2007-05-01), Nakase et al.
patent: 2007/0007540 (2007-01-01), Hashimoto et al.
Chae Su-hee
Jang Tae-hoon
Kim Hyung-kun
Buchanan & Ingersoll & Rooney PC
Quach T. N.
Samsung Electronics Co,. Ltd.
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