Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-12-06
2005-12-06
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000
Reexamination Certificate
active
06972430
ABSTRACT:
An electronic semiconductor device has a sublithographic contact area between a first conductive region and a second conductive region. The first conductive region is cup-shaped and has vertical walls which extend, in top plan view, along a closed line of elongated shape. One of the walls of the first conductive region forms a first thin portion and has a first dimension in a first direction. The second conductive region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first and the second conductive regions are in direct electrical contact at their thin portions and form the sublithographic contact area. The elongated shape is chosen between rectangular and oval elongated in the first direction. Thereby, the dimensions of the contact area remain approximately constant even in presence of a small misalignment between the masks defining the conductive regions.
REFERENCES:
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6238946 (2001-05-01), Ziegler
patent: 6512241 (2003-01-01), Lai
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6750079 (2004-06-01), Lowrey et al.
patent: 2001/0002046 (2001-05-01), Reinberg et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2002/0036931 (2002-03-01), Lowrey et al.
patent: 2002/0060334 (2002-05-01), Shukuri et al.
patent: 2002/0070401 (2002-06-01), Takeuchi et al.
patent: 2003/0075778 (2003-04-01), Klersy
patent: 2003/0219924 (2003-11-01), Bez et al.
patent: 2003/0231530 (2003-12-01), Bez et al.
patent: 2004/0012009 (2004-01-01), Casagrande et al.
patent: WO 00/57498 (2000-09-01), None
patent: WO 02/09206 (2002-01-01), None
Palun, L. et al., “Fabrication of Single Electron Devices by Hybrid (E-Beam/DUV) Lithography,”Microelectronic Engineering 53, pp. 167-170, 2000.
U.S. Appl. No. 09/276,273, filed Mar. 25, 1999, Klersy.
Bez Roberto
Casagrande Giulio
Pellizzer Fabio
Flynn Nathan J.
Iannucci Robert
Jorgenson Lisa K.
Mondt Johannes
OVONYX Inc.
LandOfFree
Sublithographic contact structure, phase change memory cell... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sublithographic contact structure, phase change memory cell..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sublithographic contact structure, phase change memory cell... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3518099