Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-03-26
2000-04-11
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257389, 257408, 257900, H01L 2976
Patent
active
060491078
ABSTRACT:
A method for forming a sub-quarter micron MOSFET having an LDD structure is described. An active area is provided in a semiconductor substrate separated from other active areas by isolation regions. Ions are implanted into the semiconductor substrate in the active area wherein a heavily doped region is formed adjacent to the surface of the semiconductor substrate and wherein a lightly doped region is formed underlying the heavily doped region. A first dielectric layer is deposited overlying the semiconductor substrate in the active area. The first dielectric layer is etched away to form an opening to the semiconductor substrate. The semiconductor substrate within the opening is etched through to form a partial trench in the semiconductor substrate. Spacers are formed on the sidewalls of the first dielectric layer within the opening. A layer of conducting material is deposited over the first dielectric layer and the spacers and within the opening. The conducting material is etched to form a gate electrode to complete the fabrication of the integrated circuit device.
REFERENCES:
patent: 5108937 (1992-04-01), Tsai et al.
patent: 5270257 (1993-12-01), Shin
patent: 5464780 (1995-11-01), Yamazaki
patent: 5472894 (1995-12-01), Hsu et al.
patent: 5538913 (1996-07-01), Hong
patent: 5571738 (1996-11-01), Krivokapic
patent: 5623153 (1997-04-01), Liang et al.
patent: 5861643 (1999-01-01), Chen et al.
Chartered Semiconductor Manufacturing Ltd.
Monin, Jr. Donald L.
Pike Rosemary L.S.
Saile George O.
LandOfFree
Sub-quarter-micron MOSFET and method of its manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sub-quarter-micron MOSFET and method of its manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sub-quarter-micron MOSFET and method of its manufacturing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1178579