Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-08
2000-05-30
Beck, Shrive
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438654, 438658, 438660, 438687, 427 99, 427123, 427124, B05D 506
Patent
active
060690682
ABSTRACT:
A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.
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Dalal Hormazdyar M.
McLaughlin Paul S.
Nguyen Du B.
Rathore Hazara S.
Smith Richard G.
Ahsan Aziz M.
Beck Shrive
Calcagni Jennifer
International Business Machines - Corporation
Ziegler, Jr. Geza C.
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