Sub-micron device fabrication with a phase shift mask having mul

Details Sub-micron device fabrication with a phase shift mask having mul Sub-micron device fabrication with a phase shift mask having mul

1991-03-22

1993-07-20

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 22, 430269, 430 5, G03F 900

Patent

active

052292550

ABSTRACT:
Fabrication of integrated circuits--electronic, photonic or hydrid--permits attainment of higher device density. Pattern delineation with smaller design rules than previously associated with delineating radiation of given wavelength is the consequence of use of phase masks. Compared with earlier used, binary valued phase masks, the multiple values of those on which this fabrication depends permits improved effectiveness in lessening of edge-smearing radiation of consequence (of diffraction-scattered delineating radiation at feature edges). Phase masking may provide, as well, for feature generation by interference, and for reduced intensity of unwanted image hot spots by diffraction.

REFERENCES:
patent: 4806442 (1989-02-01), Shirasaki et al.
patent: 5045417 (1991-09-01), Okamoto
M. D. Levinson et al. IEEE Trans. Electron Devices, vol. ED-29, p. 1828, (1982).

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