Sub-micron bipolar devices with method for forming sub-micron co

Details Sub-micron bipolar devices with method for forming sub-micron co Sub-micron bipolar devices with method for forming sub-micron co

1990-09-17

1992-05-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437193, 437200, H01L 2144, H01L 2148

Patent

active

051148676

ABSTRACT:
The sub-micron bipolar devices with method for forming sub-micron contacts provides a sub-micron bipolar device and process for manufacturing it with contacts down to 0.1 microns or less. All processes and devices utilize doped polysilicon as the electrodes for the device elements, and the preferred embodiment surrounds the polysilicon contacts with low temperature oxide covered by SOG to avoid all oxidation steps which otherwise might be detrimental to the extremely thin whisker contacts.

REFERENCES:
patent: 4280854 (1981-04-01), Shibata et al.
patent: 4523975 (1985-06-01), Groves et al.
patent: 4539744 (1985-09-01), Burton
patent: 4609407 (1986-09-01), Masao et al.
patent: 4686762 (1987-08-01), Chei et al.
patent: 4752817 (1988-06-01), Lechaton et al.

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