Sub-column-repair-circuit

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S201000

Reexamination Certificate

active

07054206

ABSTRACT:
An arrangement for repairing at least one faulty bit line of a memory includes three multiplexer stages. The memory has a plurality of columns, each column having k memory subcolumns. Each memory subcolumn has n bit lines. The first multiplexer stage has k multiplexers, each multiplexer having a multiplexer output and n multiplexer inputs connected to n bitlines of a memory subcolumn. The multiplexers of the first multiplexer stage are switched in response to a first address decoding signal. The second multiplexer stage has k multiplexers, each second stage multiplexer having a first multiplexer input connected to a multiplexer output of a first stage multiplexer associated with a first memory subcolumn, a second multiplexer input connected to a multiplexer output of a first stage multiplexer associated with a second memory subcolumn, and a multiplexer output. The multiplexers of the second multiplexer stage are switched in response to a fuse data signal. The third multiplexer stage includes at least one multiplexer having k multiplexer inputs connected to the multiplexer outputs of the multiplexers of the second multiplexer stage and one multiplexer output operably connected to a data bus of the memory. The multiplexer of the third multiplexer stage is switched in response to a second address decoding signal.

REFERENCES:
patent: 5301153 (1994-04-01), Johnson
patent: 5910921 (1999-06-01), Beffa et al.
patent: 6151263 (2000-11-01), Kyung et al.
patent: 6295237 (2001-09-01), Pochmuller
patent: 6490208 (2002-12-01), Yoon
patent: 2005/0018517 (2005-01-01), Collura et al.

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