Stuck-at defect condition repair for a non-volatile memory cell

Details Stuck-at defect condition repair for a non-volatile memory cell Stuck-at defect condition repair for a non-volatile memory cell

2010-10-07

2011-11-08

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S163000, C365S171000, C365S173000, C365S161000, C365S200000, C365S201000

Reexamination Certificate

active

08054678

ABSTRACT:
A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.

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