Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-04
2005-01-04
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000, C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S905000
Reexamination Certificate
active
06838722
ABSTRACT:
In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
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Bhalla Anup
Korec Jacek
Lui Sik
Pitzer Dorman
Shi Xiaorong
Eckert George
Ortiz Edgardo
Siliconix Incorporated
Wagner , Murabito & Hao LLP
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