Structures of a low-voltage-operative non-volatile ferroelectric

Details Structures of a low-voltage-operative non-volatile ferroelectric Structures of a low-voltage-operative non-volatile ferroelectric

1997-11-06

2000-10-03

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518526, G11C 1122

Patent

active

061282111

ABSTRACT:
A non-volatile ferroelectric memory device has been developed, in which the lead titanate (PbTiO.sub.3) thin film is deposited on a n/P.sup.+ Si substrate by rf magnetron sputtering as the gate oxide and Pt is embedded in the gate oxide as the floating gate. Additionally, associated with the rapid bulk channel structure with higher mobility, the developed memory device has the following features: (1) low write/erase voltage (.ltoreq.10 V); (2) fast access time (<160 ns); (3) easy to fabricate on VLSI memory device.

REFERENCES:
patent: 4163985 (1979-08-01), Schuermeyer et al.
patent: 5229309 (1993-07-01), Kato
patent: 5369296 (1994-11-01), Kato

Affiliated with

Also associated with

Rating

Structures of a low-voltage-operative non-volatile ferroelectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structures of a low-voltage-operative non-volatile ferroelectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structures of a low-voltage-operative non-volatile ferroelectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-201812