Structures including means for lateral current carrying...

Computer-aided design and analysis of circuits and semiconductor – Integrated circuit design processing – Optimization

Reexamination Certificate

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C716S054000, C716S101000, C716S119000

Reexamination Certificate

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07904868

ABSTRACT:
A design structure including a semiconductor structure. The semiconductor structure includes (a) a substrate; (b) a first semiconductor device on the substrate; (c) N ILD (Inter-Level Dielectric) layers on the first semiconductor device, wherein N is an integer greater than one; and (d) an electrically conductive line electrically coupled to the first semiconductor device. The electrically conductive line is adapted to carry a lateral electric current in a lateral direction parallel to an interfacing surface between two consecutive ILD layers of the N ILD layers. The electrically conductive line is present in at least two ILD layers of the N ILD layers. The electrically conductive line does not comprise an electrically conductive via that is adapted to carry a vertical electric current in a vertical direction perpendicular to the interfacing surface.

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Office Action (Mail Date May 10, 2010) for U.S. Appl. No. 12/198,196, filed Aug. 26, 2008; Confirmation No. 3652.
Notice of Allowance (Mail Date Jul. 11, 2008) for U.S. Appl. No. 11/460,314, filed Jul. 27, 2006; Confirmation No. 1812.

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