Structures having lattice-mismatched single-crystalline...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Reexamination Certificate

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C257S098000, C257SE21090, C438S479000

Reexamination Certificate

active

08053810

ABSTRACT:
A semiconductor substrate containing a single crystalline group IV semiconductor is provided. A single crystalline lattice mismatched group IV semiconductor alloy layer is epitaxially grown on a portion of the semiconductor layer, while another portion of the semiconductor layer is masked. The composition of the lattice mismatched group IV semiconductor alloy layer is tuned to substantially match the lattice constant of a single crystalline compound semiconductor layer, which is subsequently epitaxially grown on the single crystalline lattice mismatched group IV semiconductor alloy layer. Thus, a structure having both the group IV semiconductor layer and the single crystalline compound semiconductor layer is provided on the same semiconductor substrate. Group IV semiconductor devices, such as silicon devices, and compound semiconductor devices, such as GaAs devices having a laser emitting capability, may be formed on the on the same lithographic level of the semiconductor substrate.

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U.S. Office Action dated Dec. 29, 2010.
U.S. Office Action dated Aug. 20, 2010.
Notice of Allowance dated Mar. 28, 2011.

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