Structures and methods for enhancing capacitors in...

Details Structures and methods for enhancing capacitors in... Structures and methods for enhancing capacitors in...

2005-03-01

2005-03-01

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S396000, C257S303000, C257S306000

Reexamination Certificate

active

06861330

ABSTRACT:
Systems, devices, structures, and methods are described that inhibit dielectric degradation in the presence of contaminants. An enhanced capacitor in a dynamic random access memory cell is discussed. The enhanced capacitor includes a first electrode, a dielectric coupled to the first electrode, a second electrode coupled to the dielectric, and at least one inhibiting layer that couples to the first electrode, the dielectric, and the second electrode. The inhibiting layer defines a chamber that encloses the capacitor and renders the capacitor impervious to disturbance in its physical or chemical forces in the presence of contaminants. The inhibiting layer includes a nitride compound, an oxynitride compound, and an oxide compound. In one embodiment, the nitride compound includes SixNy. In another embodiment, the oxynitride compound includes SiOxNy. In another embodiment, the oxide compound includes Al2O3and (SrRu)O3. The variables x and y are indicative of a desired number of atoms. The dielectric includes an oxide compound. In one embodiment, the oxide compound includes barium strontium titanate.

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