Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device
Reexamination Certificate
2006-05-30
2006-05-30
Abraham, Fetsum (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Charge transfer device
C438S197000, C438S220000, C438S221000
Reexamination Certificate
active
07052939
ABSTRACT:
A structure that reduces signal cross-talk through the semiconductor substrate for System-On-Chip (SOC) (2) applications, thereby facilitating the integration of digital circuit blocks (6) and analog circuit blocks (8) onto a single IC. Cross-circuit interaction through a substrate (4) is reduced by strategically positioning the various digital circuit blocks (6) and analog circuit blocks (8) in an isolated wells (10), (12), (16) and (20) over a resistive substrate (4). These well structures (10), (12), (16), and (20) are then surrounded with a patterned low resistivity layer (22) and optional trench region (24). The patterned low resistivity region (22) is formed below wells (10) and (12) and functions as a low resistance AC ground plane. This low resistivity region (22) collects noise signals that propagate between digital circuit blocks (6) and analog circuit blocks (8).
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Bharatan Sushil
Huang Wen Ling M.
Kyono Carl
Monk David J.
To Kun-Hin
Abraham Fetsum
Freescale Semiconductor Inc.
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