Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-18
2011-01-18
Matthews, Colleen A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S272000, C257SE29136, C257SE21419
Reexamination Certificate
active
07872306
ABSTRACT:
A trench MOSFET with copper metal connections includes a substrate provided with a plurality of trenches. A gate oxide layer is formed on the sidewalls and bottoms of the trenches. A conductive layer is filled in the trenches to be used as a gate of the MOSFET. A plurality of source and body regions are formed in an epi layer. An insulating layer is formed on the epi layer and formed with a plurality of metal contact holes therein for contacting respective source and body regions. A barrier metal layer is formed on the sidewalls and bottoms of the metal contact holes in direct contact with respective source and body regions. A metal contact layer is filled in the metal contact holes. A copper metal layer is formed on another barrier metal layer on the insulating layer connected to respective source regions through the metal contact layer to form metal connections of the MOSFET.
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Kamrath Alan
Kamrath & Associates PA
Matthews Colleen A
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