Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-29
2005-11-29
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S348000, C257S365000, C257S401000, C257S406000, C257S411000
Reexamination Certificate
active
06969890
ABSTRACT:
A method of manufacturing a thin film transistor for solving the drawbacks of the prior art is disclosed. The method includes steps of providing an insulating substrate, sequentially forming a source/drain layer, a primary gate insulating layer, and a first conducting layer on the insulating substrate, etching the first conducting layer to form a primary gate; sequentially forming a secondary gate insulating layer and a second conducting layer on the primary gate; and etching the second conducting layer to form a first secondary gate and a second secondary gate.
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Chang Kow Ming
Chung Yuan Hung
Haverstock & Owens LLP
National Chiao Tung University
Wojciechowicz Edward
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