Structure of test element group wiring and semiconductor...

Details Structure of test element group wiring and semiconductor... Structure of test element group wiring and semiconductor...

2007-02-13

2007-02-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S758000, C438S011000, C438S014000, C438S015000, C438S018000

Reexamination Certificate

active

11016890

ABSTRACT:
A structure of test element group wiring includes, in addition to an electrode on a substrate including one or more layers of insulating films, and real wirings electrically connected to the electrode, includes dummy wirings electrically isolated from the electrode and having a portion of the same shape as the real wiring. The dummy wirings are disposed at a predetermined constant distance, adjacent to the real wirings or to each other, so that the wiring rate of the real wiring relaxes the concentration difference of patterns. The distance between the real wirings is sufficient to perform pattern analysis using the OBIRCH method.

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