Structure of strained silicon on insulator and method of...

Details Structure of strained silicon on insulator and method of... Structure of strained silicon on insulator and method of...

2007-12-19

2009-06-09

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S479000, C438S517000, C438S752000, C438S933000, C257S019000, C257SE21570, C257SE21182, C257SE29193, C257SE31049

Reexamination Certificate

active

07544585

ABSTRACT:
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2layer.

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