Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-01-27
1995-01-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257405, 257407, H01L 2910, H01L 2978
Patent
active
053789113
ABSTRACT:
A structure of a semiconductor device according to the present invention has a normally-off characteristic, a well controlability, a very low on-resistance, a capability for a high breakdown voltage, and is free from parasitic devices. For example, said semiconductor device has a plurality of bar-shaped trenches dug on the surface of an n type semiconductor substrate, which are arranged in stripe, and each of which cross sectional shape is a "U"-shape. At least one n.sup.+ type source region on the surface and it is sandwiched by the trenches. In the respective trenches, insulated electrodes whose potential is fixed to that of the source region, and whose conductive material is made of such that has a work function to generate a depletion region in the drain region around them are disposed. The depletion region functions as a barrier to interrupt between the source region and the drain region electrically. P type injector region is also disposed on the surface of the drain region, and it touches the every surface of the potential-fixed insulated electrodes at every edge of the bar-shapes, and arbitrary potential can be applied to it from an external. The potential of the injector region controls the potential of the surface of the insulated electrodes, which effects the condition of the depletion region and that effects the main current value.
REFERENCES:
patent: 3638078 (1972-01-01), Wallmark
patent: 4835586 (1989-05-01), Cogan et al.
patent: 5177572 (1993-01-01), Marakami
MacIver, Bernard A. et al., "Characteristics of Trench j-MOS Power Transistors", IEEE Electron Device Letters, vol. 10, No. 8 (Aug. 1989).
Chang, H.-R. et al., "500-V n-Channel Insulated-Gate Bipolar Transistor with a Trench Gate Structure", IEEE Transactions on Electron Devices, vol. 36, No. 9 (Sep. 1989).
Jackson Jerome
Monin, Jr. Donald L.
Nissan Motor Co,. Ltd.
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