Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-22
1996-05-28
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257377, 257382, 257401, 257412, 257620, 257635, 257754, 257773, H01L 2968
Patent
active
055214096
ABSTRACT:
A power MOSFET is created from a semiconductor body (2000 and 2001) having a main active area and a peripheral termination area. A first insulating layer (2002), typically of substantially uniform thickness, lies over the active and termination areas. A main polycrystalline portion (2003A/2003B) lies over the first insulating layer largely above the active area. First and second peripheral polycrystalline segments (2003C1 and 2003C2) lie over the first insulating layer above the termination area.
A gate electrode (2016) contacts the main polycrystalline portion. A source electrode (2015A/2015B) contacts the active area, the termination area, and the first polycrystalline segment. An optional additional metal portion (2019) contacts the second polycrystalline segment. In this case, the second polycrystalline segment extends over a scribe-line section of the termination area so as to be scribed during a scribing operation.
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Chang Mike
Chen Jun W.
Hshieh Fwu-Iuan
Owyang King
Pitzer Dorman C.
Meetin Ronald J.
Siliconix incorporated
Wallace T. Lester
Wojciechowicz Edward
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