Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2007-08-21
2007-08-21
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S781000, C257S738000, C257S778000, C257SE23020
Reexamination Certificate
active
10835571
ABSTRACT:
The present invention discloses a structure of wafer level packaging. The structure comprises a first patterned isolation layer, a conductive layer and a second patterned isolation layer. The first patterned isolation layer is formed with a passivation layer of an IC (Integrated Circuit). The conductive layer is configured to have a curved or winding conductive pattern. The second patterned isolation layer is formed over the conductive layer to have a plurality of openings, and contact metal balls can be formed on the openings to electrically couple to a print circuit board.
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Advanced Chip Engineering Technology Inc.
Chu Chris C.
Kusner & Jaffe
Parker Kenneth
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