Structure of nonvolatile memory array

Details Structure of nonvolatile memory array Structure of nonvolatile memory array

2006-02-28

2006-02-28

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S324000

Reexamination Certificate

active

07005696

ABSTRACT:
A structure of a nonvolatile memory array with low source line sheet resistance is disclosed in this present invention. The key aspect of this present invention is employing a buried conductive region as the source line of a nonvolatile memory array. The topology of the above-mentioned buried conductive region is different from the source line in the prior art. Therefore, this invention can provide a nonvolatile memory array for reducing the source line sheet resistance and achieving the reliability and the operating performance of the nonvolatile memory array.

REFERENCES:
patent: 6153471 (2000-11-01), Lee et al.
patent: 6211012 (2001-04-01), Lee et al.
patent: 6372564 (2002-04-01), Lee
patent: 6635532 (2003-10-01), Song et al.

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