Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-04-18
2006-04-18
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S786000
Reexamination Certificate
active
07030490
ABSTRACT:
A multi-wire wire-bonding structure suitable for a high frequency signal comprises a first electronic device, a second electronic device, a chip pad and a plurality of metal wires. The first electronic device is attached to the second electronic device with the chip pad. As a result, the first electronic device and the second electronic device form a stair-like structure. A plurality of bonding pads comprises at least one signal bonding pad and grounded bonding pads. The signal bonding surface is surrounded by the ground bonding pads. All the bonding pads are located at the surface of the first electronic device. The chip pad carries the first electronic device and the exceeding part is a ring grounded bonding pad which surrounds the first electronic device. The second electronic device carries the chip pad and a margin of the second electronic device is exceeding the chip pad. There are several leads on the margin of the second electronic device in corresponding to the ground bonding pads and the signal bonding pad. Metal wires comprise a signal wire and grounding wires. The bonding pads of the first electronic device are classified as the first row bonding pads which is close to the ring ground bonding surface and the second row bonding pads which is away from the ring ground bonding surface. The signal wire electrically connects to the signal bonding pads and the corresponding lead. The ground wires electrically connect to the first row bonding pads and the ring ground bonding surface.
REFERENCES:
patent: 6538336 (2003-03-01), Secker et al.
Ho Tu-Tu
Via Technologies Inc.
LandOfFree
Structure of multi-tier wire bonding for high frequency... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure of multi-tier wire bonding for high frequency..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of multi-tier wire bonding for high frequency... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3578514