Structure of metal-insulator-semiconductor-like...

Details Structure of metal-insulator-semiconductor-like... Structure of metal-insulator-semiconductor-like...

1998-08-03

2001-03-06

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S606000

Reexamination Certificate

active

06197622

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a structure of an MNDR device and fabrication method thereof, and especially relates to a structure of an MIS-like MNDR device and fabrication method thereof.
2. Description of the Related Art
In recent years, MNDR devices have attracted much interest for applications in microwave and logic circuits. In the quest to facilitate current circuitry design, MNDR, which can simplify circuitry design and reduce circuitry complexity is of great interest. In practice, multiple-switching behavior of MNDR devices is the main reason that they are so effective. GaAs—InGaAs MIS-like structure with stepping quantum well represents one kind of MNDR device. The related reference is given by : [1] D. C. Y. Chang, C. L. Lee, and T. F. Lei, “Switching characteristics of MINPN devices,” Solid-State Electron., vol. 32, pp. 179-189, 1989; [2] S. S. Lu and Y. J. Wang, “A GSMBE grown In
0.49
Ga
0.51
P/GaAs narrow base DHBT exhibiting N-shaped negative resistance with peak-to-valley current ratio up 1×10
17
at room temperature,” IEEE Electron Device Lett., vol. 15, no. 2, pp 60-62, 1994; [3] C. L. Wu, W. C. Hsu, H. M. Shieh and M. S. Tsai, “A novel &dgr; doped GaAs/InGaAs real-space transfer transistor with high peak-to-valley ratio and high current driving capability,” IEEE Electron Device Lett., vol. 16, pp. 112-114, 1995; [4] E. F. Schrbert, J. E. Cunningham, and W. T. Tsang, “Perpendicular electric transport in doping superlattices,” Appl. Phys. Lett., vol. 51, pp. 817-819, 1987; [5] W. S. Lour and W. C. Liu, “Negative-differential-resistance (NDR) superlattice-emitter transistor,” Jpn. J. Appl. Phys., vol. 30, pp. L564-L567, 1991; and [6] W. C. Liu, L. W. Laih, J. H. Tsai, K. W. Lin, and C. C. Cheng, “Multi-Route Current-Voltage(I-V) Characteristics of GaAs—InGaAs Metal-Insulator Semiconductor-Like(MIS) Structure for Multiple-Valued Logic Application,” IEEE Journal of Quantum Electrons Vol. 32, No. 9, 1996.
SUMMARY OF THE INVENTION
Thus, there is a need to provide a structure of a device and a fabrication method thereof which has excellent potential for multiple-value logic circuit applications and is capable of reducing circuitry complexity.
One objective of the present invention is to provide a structure of an MIS-like MNDR device and fabrication method thereof wherein the MNDR device has excellent potential for multiple-value logic circuit applications and is capable of reducing circuitry complexity.
Another objective of the present invention is to provide a structure of an MIS-like MNDR device and fabrication method thereof wherein the MIS device has the characteristics of dual-route and MNDR at low temperatures.
In order to archive the objectives, the present invention provides a structure of an MIS-like MNDR device and fabrication method thereof wherein the MIS device has the characteristics of dual-route and MNDR at low temperatures. The device of the present invention is formed on a wafer formed of high n-doping GaAs. The structure of the present invention comprises: an n-doping GaAs layer, formed on the wafer, having a thickness of 5000 Å; an n-doping InGaAs layer, formed on the n-doping GaAs layer, having a thickness of 200 Å and a doping concentration of 1×10
16
cm
−3
; an n-doping GaAs layer, formed on the n-doping InGaAs layer, having a thickness of 150 Å and a doping concentration of 1×10
16
cm
−3
; an Au layer, evaporated on the n-doping GaAs layer; and an Au—Ge—Ni alloy layer, evaporated on the back surface of the wafer. The method of the present invention comprises: forming an n-doping GaAS layer having a thickness of 5000 Å on a wafer; forming an n-doping InGaAS layer having a thickness of 200 Å and a doping concentration of 1×10
16
cm
−3
on the n-doping GaAs layer; forming an n-doping GaAs layer having a thickness of 150 Å and a doping concentration of 1×10
16
cm
−3
on the n-doping InGaAs layer; evaporating an Au layer on the n-doping GaAs layer; and evaporating an Au—Ge—Ni alloy layer on the back surface of the wafer.


REFERENCES:
patent: 6044100 (2000-03-01), Hobson et al.

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