Structure of magnetic random access memory using spin-torque...

Details Structure of magnetic random access memory using spin-torque... Structure of magnetic random access memory using spin-torque...

2011-01-04

2011-01-04

Le, Thao X (Department: 2892)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C257SE21665, C438S003000

Reexamination Certificate

active

07864569

ABSTRACT:
A nano-magnetic device includes a first hard magnet having a first magnetization direction and having a central axis. The device also includes a second hard magnet separated from the first hard magnet by a dielectric liner. The second hard magnet has a second magnetization direction opposite to the first magnetization direction of the first hard magnet, and a central axis, such that when the first hard magnet and the second hard magnet are aligned a closed magnetic flux loop is formed through the first and second hard magnets. The device additionally includes a ferromagnetic free layer having a central axis. A spin-torque transfer current passes along the central axes of the first and second hard magnets and the ferromagnetic free layer, and affects the magnetization direction of the ferromagnetic free layer.

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Hosomi et al., A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM, 4 pgs., (2005).
Jeong et al., Highly Scalable MRAM Using Field Assisted Current Induced Switching, Symposium on VLSI Technology Digest of Technical Papers, 184-185, (2005).

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