Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-02-05
1998-12-01
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 349 44, 349 97, 349106, 349110, 349111, 349137, 349138, G02F 11343, G02F 11335
Patent
active
058442553
ABSTRACT:
The i-type semiconductor layer (AS) and the gate insulating film (GI) are patterned along and in the same shape as the video signal lines (DL) between the video signal lines (DL) and the first transparent glass substrate (SUB1 ). The backlight is disposed on the second transparent glass substrate (SUB2) side. Therefore, signal line reflection of external light can be prevented, improving the display quality.
REFERENCES:
patent: 5187604 (1993-02-01), Taniguchi et al.
patent: 5402254 (1995-03-01), Sasano et al.
patent: 5469278 (1995-11-01), Takahara et al.
patent: 5668649 (1997-09-01), Suzuki et al.
Itoh Hikaru
Kamei Tatsuo
Matsunaga Kuniyuki
Ohwada Jun-ichi
Ono Kikuo
Abraham Fetsum
Hitachi , Ltd.
Thomas Tom
LandOfFree
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