Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-11-06
1994-08-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 365145, 365149, H01L 2968, H01L 2722, G11C 1122, G11C 1124
Patent
active
053389514
ABSTRACT:
A capacitor for a semiconductor structure is formed having a substrate, a stack of a buffer layer and a layer of ferroelectric material, and a top electrode. The capacitor can also have a layer of polysilicon between the substrate and the buffer layer. A method for forming the same, through establishing a substrate, a buffer layer and a layer of ferroelectric material, defining and annealing the buffer layer and layer of ferroelectric material, and establishing a top electrode, is also disclosed.
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Argos, Jr. George
Kalkur Thottam S.
Crane Sara W.
Manzo Edward D.
Murphy Mark J.
Ramtron International Corporation
Wallace Valencia M.
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