Structure of electrically programmable read-only memory cells an

Details Structure of electrically programmable read-only memory cells an Structure of electrically programmable read-only memory cells an

1991-07-17

1993-05-04

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Having fuse element

365 96, G11C 1716

Patent

active

052087808

ABSTRACT:
In an electrically programmable ROM, each cell 13 includes a series-connected element composed of a combination writing and reading transistor 17 and a fuse 15. One end of this series-connected element is connected to a corresponding bit line 19, and the other end thereof is grounded. A gate of the transistor 17 of the series-connected element is connected to a corresponding word line 23. Each bit line 19 is connected to a high-voltage applying pad 21 via an element such as diode or transistor provided with electrically connecting/isolating functions. When a data is written in the memory cell 13, the high-voltage applying pad 21 is electrically connected to the bit line 19. Under these conditions, if a high voltage is applied to the high-voltage applying pad 21, the transistor 17 performs snap-back action (i.e. secondary breakdown) to blow out the fuse 15. When the data is read, the high-voltage applying pad 21 is isolated from the bit line 19 without exerting influence upon the read out operation. In addition, in the above-mentioned electrically programmable ROM, a circuit for electrically blowing out the fuse by utilizing transistor's snap-back action is used as a redundancy signature indicative of whether the redundancy circuit is used or unused.

REFERENCES:
patent: 4287569 (1981-09-01), Fukushima
patent: 4970686 (1990-11-01), Naruke et al.
patent: 5056061 (1991-10-01), Akylas et al.
patent: 5058059 (1991-10-01), Matsuo et al.
patent: 5079746 (1992-01-01), Sato
"Naruke et al." Nonvolatile Memories, A 16Mb Mask ROM with programmable Redundancy, IEEE International Solid-State Circuits Conference, 1989.

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