Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-08
2000-06-20
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, 438951, 438670, H01L 2144
Patent
active
060777656
ABSTRACT:
A method of forming a bump electrode, comprises the steps of preparing an Si-substrate having a plurality of bonding pads, forming a core on a substantially central portion of the bonding pad on the substrate, forming a resist layer around the core, which has a greater plan-view shape than the core and is provided with an opening portion through which that portion of the bonding pad, which is located around the core, is exposed, and coating an electric conduction strip having a uniform thickness on peripheral and upper surfaces of the core and on that portion of the bonding pad, which is located around the core, by a plating method.
REFERENCES:
patent: 5251806 (1993-10-01), Agarwala et al.
patent: 5808853 (1998-09-01), Dalal et al.
Casio Computer Co. Ltd.
Everhart Caridad
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