Structure of bump electrode and method of forming the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438613, 438951, 438670, H01L 2144

Patent

active

060777656

ABSTRACT:
A method of forming a bump electrode, comprises the steps of preparing an Si-substrate having a plurality of bonding pads, forming a core on a substantially central portion of the bonding pad on the substrate, forming a resist layer around the core, which has a greater plan-view shape than the core and is provided with an opening portion through which that portion of the bonding pad, which is located around the core, is exposed, and coating an electric conduction strip having a uniform thickness on peripheral and upper surfaces of the core and on that portion of the bonding pad, which is located around the core, by a plating method.

REFERENCES:
patent: 5251806 (1993-10-01), Agarwala et al.
patent: 5808853 (1998-09-01), Dalal et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Structure of bump electrode and method of forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure of bump electrode and method of forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of bump electrode and method of forming the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1851758

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.