Structure of an antenna effect monitor

Details Structure of an antenna effect monitor Structure of an antenna effect monitor

1998-10-14

1999-09-28

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257355, 257356, H01L 2358

Patent

active

059593113

ABSTRACT:
An antenna effect monitor includes a transistor formed on a semiconductor substrate. The transistor gate is coupled to a doped polysilicon interconnect layer which is also coupled to an antenna effect monitoring unit. Several metal bonding pads float in an orderly fashion above the doped polysilicon interconnect layer without coupling with each other. Several small metal layers are formed in an orderly fashion above the doped polysilicon interconnect layer but are electrically coupled together by several via plugs in between. The top small metal layer is coupled to the top bonding pad. The bottom small metal layer is electrically coupled to the doped polysilicon interconnect layer. Then a passivation layer covers the substrate but leaves a pad opening to expose the top bonding pad.

REFERENCES:
patent: 5650651 (1997-07-01), Bui
patent: 5726458 (1998-03-01), Bui

Affiliated with

Also associated with

Rating

Structure of an antenna effect monitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure of an antenna effect monitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of an antenna effect monitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-706297