Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2005-02-08
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S327000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000
Reexamination Certificate
active
06853031
ABSTRACT:
A structure of a Trapezoid-Triple-Gate Field Effect Transistor (FET) includes a plurality of trapezoid pillars being transversely formed on an crystalline substrate or Silicon-On-Insulator (SOI) wafer. The trapezoid pillars can juxtapose with both ends connected each other. Each trapezoid pillar has a source, a channel region, and a drain aligned in longitudinal direction and a gate latitudinally superposes the channel region of the trapezoid pillar. The triple gate field effect transistor comprises a dielectric layer formed between the channel region and the conductive gate structure.
REFERENCES:
patent: 3761785 (1973-09-01), Pruniaux
patent: 4063271 (1977-12-01), Bean et al.
patent: 4316207 (1982-02-01), Matsumoto
patent: 4568958 (1986-02-01), Baliga
patent: 4763180 (1988-08-01), Hwang et al.
patent: 5334548 (1994-08-01), Shen et al.
patent: 5681775 (1997-10-01), Pogge
patent: 5963807 (1999-10-01), Ueno
patent: 5986304 (1999-11-01), Hshieh et al.
patent: 6034393 (2000-03-01), Sakamoto et al.
patent: 6043122 (2000-03-01), Liu et al.
patent: 6043531 (2000-03-01), Stecher et al.
patent: 6114207 (2000-09-01), Okabe et al.
patent: 6117345 (2000-09-01), Liu et al.
patent: 6252272 (2001-06-01), Watanabe et al.
patent: 20010041421 (2001-11-01), Park et al.
patent: 20020109182 (2002-08-01), Lee et al.
patent: 20030211695 (2003-11-01), Chang
Intel Researchers; Three—Dimensional ‘Tri-Gate’ Transistors an Alernative to Traditional Flat Planar Transistors; Sep. 19, 2002;www.intel.com/pressroom.
Hwang Jiunn-Ren
Liao Wen-Shiang
Shiau Wei-Tsun
Nath & Associates PLLC
Novick Harold L.
Soward Ida M.
United Microelectronics Corp.
Zarabian Amir
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