Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2000-09-12
2001-05-22
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C257S415000, C257S416000, C257S417000, C438S050000, C438S051000, C438S053000, C073S024050
Reexamination Certificate
active
06236096
ABSTRACT:
BACKGROUND OF THE INVENTION
This invention is a capacitive pressure sensor. It is a three-electrode capacitive pressure sensor with structure and producing method for of especially integrating and producing both sensor capacitor and reference capacitor into the same pressure sensor cavity for eliminating environment interference of the same mode.
Two parallel electrode plates compose general capacitive pressure sensor. In micro sensor, these two electrode plates generally are a silicon film and a metal film on glass insulation material. Therefore, a dimensional connection of the two upper and lower electrode plates is usually seen in the producing procedure of capacitive pressure sensor. This procedure requires contact base of the two upper and lower electrode plates with optical masking that increases more producing procedure and causes cost enhancement.
For avoiding dimensional connection of upper and lower electrode plates for a single capacitor, one electrode plate can be separated into two parts and then form a planar connection by series of capacitors through another electrode plate. However, this method will reduce its pressure sensitivity because the original capacitor is divided into two smaller capacitors, which then are connected by series method.
The capacitor pressure sensor composed by the dual capacitors, one is sensor capacitor and the other is reference capacitor, can cancel off environment change under same mode through differentiated measurement. Such capacitive structure and design can enlarge at least one time more in sizes in comparison with that of single capacitive. Besides, an additional connection shall be made between electrode plates of such dual capacitors.
SUMMARY OF THE INVENTION
In order to solve these difficulties, a three-electrode capacitive pressure sensor structure and producing method with only a four-course optical masking is therefore developed which can integrate and produce dual capacitors into a pressure sensor cavity without increasing sensor size and complete dual capacitors requirement of differentiated measurement circuitry. Meanwhile, existence of the third electrode not only achieves planar connection production but also enhance its pressure sensitivity.
REFERENCES:
patent: 5503285 (1996-04-01), Warren
patent: 5528452 (1996-06-01), Ko
patent: 5543349 (1996-08-01), Kurtz et al.
patent: 5792957 (1998-08-01), Luder et al.
patent: 5912499 (1999-06-01), Diem
patent: 6036872 (2000-03-01), Wood et al.
Chang Kow-Ming
Hsieh Yeou-Lang
Hwang Gwo-Jen
Bacon & Thomas
Le Dung A
National Science Council of Republic of China
Nelms David
LandOfFree
Structure of a three-electrode capacitive pressure sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure of a three-electrode capacitive pressure sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of a three-electrode capacitive pressure sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2455411