Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-05-15
2000-03-21
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257301, 257306, H07L 27108
Patent
active
060405953
ABSTRACT:
A structure of dynamic random access memory includes a field effect transistor (FET), a capacitor, a world line and a bit line. The gate of the FET is electrically coupled to the word line in which a voltage source is supplied through the world line to the gate. The drain region of the FET is electrically coupled to a lower electrode of the capacitor. The capacitor has an upper electrode being electrically coupled to the gate of the FET either. The source region of the FET is electrically coupled to the bit line.
REFERENCES:
patent: 5146300 (1992-09-01), Hamamoto et al.
patent: 5327374 (1994-07-01), Krautschneider et al.
patent: 5463234 (1995-10-01), Toriumi et al.
patent: 5498889 (1996-03-01), Hayden
patent: 5559733 (1996-09-01), McMillan et al.
patent: 5689456 (1997-11-01), Kobayashi
patent: 5753946 (1998-05-01), Naiki et al.
Hardy David
Winbond Electronics Corp.
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