Structure of a field effect transistor having metallic...

Details Structure of a field effect transistor having metallic... Structure of a field effect transistor having metallic...

2007-07-17

2007-07-17

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S377000, C257S768000, C257S757000, C257SE21199, C257SE21439, C257SE21438, C257SE21440, C438S233000, C438S655000, C438S656000

Reexamination Certificate

active

09825973

ABSTRACT:
A field effect transistor having metallic silicide layers is formed in a semiconductor layer on an insulating layer of an SOI substrate. The metallic silicide layers are composed of refractory metal and silicon. The metallic silicide layers extend to bottom surfaces of a source and a drain regions. A ratio of the metal to the silicon in the metallic silicide layers is X to Y. A ratio of the metal to the silicon of metallic silicide having the lowest resistance among stoichiometaric metallic silicides is X0to Y0. X, Y, X0and Y0satisfy the following inequity: (X/Y)>(X0/Y0).

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