Structure of a CMOS image sensor

Details Structure of a CMOS image sensor Structure of a CMOS image sensor

2005-06-14

2005-06-14

Ngô, Ngân (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S294000

Reexamination Certificate

active

06906364

ABSTRACT:
A structure of a CMOS image sensory device is described. A photodiode sensory region and a transistor device region are isolated from each other by an isolation layer formed in the substrate. A gate structure is located on the transistor device region, and a source/drain region is in the transistor device region beside the side of the gate structure. A doped region is in the photodiode sensory region. A self-aligned block is located on the photodiode sensory region and a protective layer is formed on the entire substrate.

REFERENCES:
patent: 6166405 (2000-12-01), Kuriyama et al.
patent: 6232626 (2001-05-01), Rhodes
patent: 6448595 (2002-09-01), Hsieh et al.
patent: 2002/0089004 (2002-07-01), Rhodes
patent: 2004/0195600 (2004-10-01), Rhodes

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