Structure of a charge storage electrode

Details Structure of a charge storage electrode Structure of a charge storage electrode

1994-12-27

1996-10-01

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257308, 257309, 257534, 361303, H01L 27108

Patent

active

055613098

ABSTRACT:
A charge storage electrode structure and the manufacturing method therefor. The present invention features forming two oxide patterns having viscous property at certain temperatures on a barrier layer as rectangular bar-shaped patterns and applying heat to two oxide patterns to transform the two oxide patterns to cylindrical oxide patterns; depositing polysilicon layer on the cylindrical oxide patterns; etching each end of the portions of the polysilicon layer and removing the two oxide patterns; so as to provide a charge storage electrode structure having at least two conduits which is formed with a polysilicon. The charge storage electrode structure according to the present invention has an increased effective surface area and is manufactured by a relatively simple method facilitating the manufacture of highly integrated semiconductor device.

REFERENCES:
patent: 5238862 (1993-08-01), Blalock et al.
patent: 5268322 (1993-12-01), Lee et al.
patent: 5371701 (1994-12-01), Lee et al.

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