Structure of a capacitor section of a dynamic random-access memo

Details Structure of a capacitor section of a dynamic random-access memo Structure of a capacitor section of a dynamic random-access memo

1998-02-25

2000-11-21

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, H01L 27108

Patent

active

061506907

ABSTRACT:
Capacitors are formed in the trenches made in an interlayer insulator made of silicon oxide. An insulating film (e.g., a silicon nitride film) is provided on the sides of each trench of the interlayer insulator. A storage electrode made of ruthenium or the like is provided in each trench of the interlayer insulator. A capacitor insulating film made of BSTO or the like is formed on the storage electrode. A plate electrode made of ruthenium or the like is formed on the capacitor insulating film. The plate electrode is common to all capacitors provided. Any two adjacent capacitors are electrically isolated by the interlayer insulator and the insulating film provided on the sides of the trenches of the interlayer insulator.

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