Structure of a capacitor in a semiconductor device having a self

Details Structure of a capacitor in a semiconductor device having a self Structure of a capacitor in a semiconductor device having a self

1998-08-03

2000-06-20

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361305, 3613063, 3613215, 257303, 257306, H01G 430, H01G 4008

Patent

active

06078492&

ABSTRACT:
A structure of a capacitor includes two gates and a commonly used source/drain region on a substrate. Then, a pitted self align contact window (PSACW) partly exposes the commonly used source/drain region. Then an glue/barrier layer and a lower electrode of the capacitor are over the PSACW. Then a dielectric thin film with a material having high dielectric constant is over the lower electrode. Then, an upper electrode is over the dielectric thin film to complete a capacitor, which has a structure of metal insulator metal with a shape like the PSACW.

REFERENCES:
patent: 4845539 (1989-07-01), Inoue
patent: 5672543 (1997-09-01), Chang et al.
patent: 5918120 (1999-06-01), Huang
patent: 5936273 (1999-08-01), Chen
patent: 5952687 (1999-09-01), Kawakubo et al.

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