Structure having a shallow trench-deep trench isolation...

Details Structure having a shallow trench-deep trench isolation... Structure having a shallow trench-deep trench isolation...

2008-05-13

2008-05-13

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S270000

Reexamination Certificate

active

11272259

ABSTRACT:
A structure having a shallow trench-deep trench isolation region for a semiconductor device is provided.

REFERENCES:
patent: 5895253 (1999-04-01), Akram
patent: 6110794 (2000-08-01), Liu
patent: 6188104 (2001-02-01), Choi et al.
patent: 6194287 (2001-02-01), Jang
patent: 6214696 (2001-04-01), Wu
patent: 6232043 (2001-05-01), Lin et al.
patent: 6255184 (2001-07-01), Sune
patent: 6413835 (2002-07-01), Norstrom et al.
patent: 7061047 (2006-06-01), Ono et al.

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