Structure for testing junction leakage of salicided devices fabr

Details Structure for testing junction leakage of salicided devices fabr Structure for testing junction leakage of salicided devices fabr

1996-07-26

1998-06-02

Nguyen, Tuan H.

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438 14, 438682, H01L 2166

Patent

active

057598711

ABSTRACT:
A resistor protect mask is used on a shallow trench isolation device junction to cover a device area except for a strip on the perimeter of the device area. The silicide layer formed on the central surface portion of the device and the strip area on the perimeter of the device upon which silicide formation is prevented forms a test structure for evaluation of junction formation that is immune from the effects of silicide formation on a device trench sidewall. Electrical tests and leakage measurements upon the test structure are compared directly to similar silicide shallow trench isolated devices which do not incorporate the resistor protect mask and shallow trench isolated devices without silicide to determine whether salicide processing is a cause of junction effects including junction leakage and short-circuiting.

REFERENCES:
patent: 4144493 (1979-03-01), Lee et al.
patent: 5504354 (1996-04-01), Mohsen
patent: 5670891 (1997-09-01), Ling et al.
Girard P. et al, "Low Leakage Current Evaluations For Process Characterizatins", Proceedings of the European Solid State Device Research Converence, Nottingham, Sep. 10-13, 1990, NR. Conf. 20, pp. 197-200.
IBM Technical Disclosure Bulletin, vol. 30, No. 5, Oct. 1, 1987, pp. 385-386 "Monitor for Assurance of Trench Channel Stop Doping".

Affiliated with

Also associated with

Rating

Structure for testing junction leakage of salicided devices fabr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure for testing junction leakage of salicided devices fabr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure for testing junction leakage of salicided devices fabr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1458915