Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-17
2008-06-17
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S372000, C257S210000, C257S403000, C257S536000
Reexamination Certificate
active
07388260
ABSTRACT:
Structures for spanning gap in body-bias voltage routing structure. In an embodiment, a structure is comprised of at least one metal wire.
REFERENCES:
patent: 6936898 (2005-08-01), Pelham et al.
patent: 2001/0024859 (2001-09-01), Takahashi et al.
Burr James B.
Masleid Robert P.
Pelham Michael
Pham Long
Transmeta Corporation
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