Structure for reducing overlap capacitance in field effect...

Details Structure for reducing overlap capacitance in field effect... Structure for reducing overlap capacitance in field effect...

2007-08-07

2007-08-07

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S340000, C257S344000, C257S346000, C257S387000, C257S408000, C257SE29268

Reexamination Certificate

active

11161447

ABSTRACT:
A field effect transistor (FET) device includes a gate conductor formed over a semiconductor substrate, a source region having a source extension that overlaps and extends under the gate conductor, and a drain region having a drain extension that overlaps and extends under the gate conductor only at selected locations along the width of the gate conductor.

REFERENCES:
patent: 6255175 (2001-07-01), Yu
patent: 6448613 (2002-09-01), Yu
patent: 6573560 (2003-06-01), Shenoy
patent: 6743685 (2004-06-01), Wu et al.
patent: 6870220 (2005-03-01), Kocon et al.
patent: 2005/0035408 (2005-02-01), Wang et al.
patent: 2005/0116298 (2005-06-01), Tihanyi

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