Structure for realizing integrated circuit having Schottky...

Details Structure for realizing integrated circuit having Schottky... Structure for realizing integrated circuit having Schottky...

2007-12-21

2009-12-01

Andújar, Leonardo (Department: 2826)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

C257S471000, C257S480000, C438S570000

Reexamination Certificate

active

07625804

ABSTRACT:
An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.

REFERENCES:
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patent: 6952560 (2005-10-01), Feibig et al.
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patent: 2003-330039 (2003-11-01), None
patent: 96/03770 (1996-02-01), None

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