Structure for protecting integrated circuits from electro-static

Details Structure for protecting integrated circuits from electro-static Structure for protecting integrated circuits from electro-static

1995-09-28

1996-06-18

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257356, H01L 2362, H01L 29861

Patent

active

055280641

ABSTRACT:
An input protection circuit for a MOS device uses back-to-back zener diodes 30 and 40 with the anodes 130 and 150 connected and floating. This circuitry protects against positive and negative ESD events and does not interfere with the normal operation of the MOS device. The inventive circuit allows an improved gate operating range of the forward bias voltage of a first diode 30 plus the breakdown voltage of a second diode 40 below the supply voltage to the breakdown voltage of the first diode 30 plus the forward bias voltage of the second diode 40 above the supply voltage.

REFERENCES:
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 5001529 (1991-03-01), Ohshima et al.
patent: 5268588 (1993-12-01), Marum
patent: 5324971 (1994-06-01), Notley
patent: 5432368 (1995-07-01), Jimenez

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